We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2–3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

中文翻译：

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表面钝化在集成亚带隙硅光电检测中的作用

我们通过实验研究了氧化物去除对电信波长范围的硅波导中的子带隙光电检测的影响。使器件去钝化可以使量子效率提高大约2-3倍。此外，通过氧化物的去除大大减少了器件内的传播损耗。钝化后60天测量设备显示出细微的差异。我们为这些观察提供可能的解释。显然，钝化和钝化在此类片上带隙光电检测器器件的设计和实现中起着至关重要的作用，这些器件适用于片上光监控等应用。