In₂S₃ thin films were deposited onto soda lime glass substrates using thermal evaporation technique at a constant substrate temperature of 300 °C and the films were annealed in a sulfur ambient at 250 °C and 300 °C for 1 h. Light induced transient grating (LITG) technique was used to determine the carrier lifetime in In₂S₃ thin films. The determined carrier lifetime values for different excitation energy densities, I₀ = 0.06–1.64 mJ/cm² decreased from 206 to 18 ps and 150 to 14 ps for the films annealed at 250 °C and 300 °C respectively. Further, the bimolecular, Auger recombination coefficients and diffusion coefficient were determined in the films. The observed bimolecular carrier recombination origin was explained by interface and Auger recombination processes.

中文翻译：

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光诱导瞬态光栅技术测定In 2 S 3热蒸发薄膜中的载流子寿命

在₂ S ₃中，使用热蒸发技术在300°C的恒定基板温度下将薄膜沉积到钠钙玻璃基板上，然后将膜在250°C和300°C的硫环境中退火1 h。使用光诱导瞬态光栅（LITG）技术确定In ₂ S ₃薄膜中的载流子寿命。不同激励能量密度下确定的载流子寿命值，I ₀  = 0.06-1.84 mJ / cm ²对于分别在250°C和300°C退火的薄膜，薄膜的腐蚀速率从206 ps降低到18 ps，从150 ps降低到14 ps。此外，确定膜中的双分子，俄歇复合系数和扩散系数。界面和俄歇重组过程解释了观察到的双分子载体重组起源。