The preparation method of advanced ceramics that serve as target materials, has been the key challenge to produce high quality thin film transistors (TFTs) with the desired properties. In this study, a novel two-step sintering (TSS) process was successfully applied to fabricate indium gallium zinc oxide (IGZO) ceramics. The sintering behaviour of the IGZO compacts was investigated in detail and it was established that the first step optimum temperature should be in the range of 1400–1500 ℃, while for the second step should be 1350℃ with a dwell time of 12 h. Using this method, the relative density, average grain size and resistivity of the IGZO ceramics could reach 99.5%, 4–5 μm and 2.31 mΩ⋅cm, respectively. The corresponding IGZO thin films produced from the ceramic through sputter deposition had an average transmittance of over 88% and a low resistivity of 3.56 mΩ⋅cm. These excellent properties suggest that TSS has considerable potential as a viable approach for the preparation of ceramic target materials, which find application in the fabrication of TFTs.

用作目标材料的高级陶瓷的制备方法一直是生产具有所需性能的高质量薄膜晶体管（TFT）的关键挑战。在这项研究中，一种新颖的两步烧结（TSS）工艺已成功应用于制造铟镓锌氧化物（IGZO）陶瓷。详细研究了IGZO压块的烧结行为，并确定第一步的最佳温度应在1400–1500℃的范围内，而第二步的最佳温度应在1350℃的停留时间为12 h。使用这种方法，IGZO陶瓷的相对密度，平均晶粒度和电阻率分别可以达到99.5％，4–5μm和2.31mΩ·cm。由陶瓷通过溅射沉积制备的相应的IGZO薄膜具有超过88％的平均透射率和3.56mΩ·cm的低电阻率。这些优异的性能表明，TSS作为制备陶瓷靶材的可行方法具有巨大的潜力，该陶瓷靶材可用于制造TFT。