CuInS₂ (CIS) quantum dots (QDs) were investigated as a luminescent downshifting (LDS) material that converts near-ultraviolet (UV) light to visible light and were applied to a single crystalline silicon (c-Si) solar module that has no spectral sensitivity in the near-UV region. The bandgap of the CIS/ZnS core/shell QDs was successfully adjusted to ∼3 eV, which was adequate for the LDS layer in solar devices, by changing the molar ratio of Cu/In. CIS/ZnS/ZnS core/shell/shell QDs with 59.9% absolute photoluminescence (PL) quantum yield were prepared by the hot-injection method and embedded in ethylene–vinyl acetate copolymer (EVA) resin to fabricate QD@EVA films as the LDS layer. The PL intensity of the QD@EVA films under near-UV excitation monotonically increased with increasing QD concentration. The films were attached to a commercial single c-Si solar module. The advantages and drawbacks of the films were discussed based on the results of incident photon-to-electron conversion efficiency and current–voltage curve measurements.

中文翻译：

---

用于晶体硅太阳能组件中发光降档层的带隙调整的CuInS ₂ / ZnS核/壳量子点

CuInS ₂（CIS）量子点（QDs）作为一种发光降档（LDS）材料进行了研究，该材料将近紫外（UV）光转换为可见光，并应用于没有光谱敏感性的单晶硅（c-Si）太阳能模块在近紫外线区域。通过改变Cu / In的摩尔比，将CIS / ZnS核/壳QD的带隙成功地调节到约3 eV，这对于太阳能设备中的LDS层是足够的。通过热注入法制备了具有59.9％绝对光致发光（PL）量子产率的CIS / ZnS / ZnS核/壳/壳量子点，并将其嵌入乙烯-乙酸乙烯酯共聚物（EVA）树脂中以制造QD @ EVA薄膜作为LDS层。QD @ EVA薄膜在近紫外光激发下的PL强度随QD浓度的增加而单调增加。将膜附着到商业单c-Si太阳能组件上。根据入射光子至电子的转换效率和电流-电压曲线的测量结果，讨论了薄膜的优缺点。