Abstract Flexible Cu(InGa)Se2 solar cells fabricated on metal foils and plastics have achieved high conversion efficiency so far. However, metal impurities and low temperature tolerance hinder them from further considerable development. Here, 150 μm-thick ultrathin glass with desirable advantages was applied as substrate for Cu(InGa)Se2 solar cell. Potassium element was doped by a simple method during the post-selenization process. The results showed that the KInSe2 phase existed in K-doped Cu(InGa)Se2 films. The K-doped CIGS films were more compact than the pristine one due to the fact that K incorporated in films could form quasi-liquid alkali-metal-Se compounds and improve the compactness of films. K-incorporated CIGS films exhibited enhanced p-type conductivity and different surface energy level. Consequently, K-doped Cu(InGa)Se2 solar cell achieved an optimal efficiency of 8.3%, which was relatively 43% higher than that of pristine solar cell. Investigation of performance and stability of solar cells manifested that the K incorporation retarded the performance degradation of device during cyclic bending.

中文翻译：

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通过掺入钾增强超薄玻璃上的 Cu(InGa)Se2 太阳能电池的性能和稳定性

摘要 目前，在金属箔和塑料上制备的柔性 Cu(InGa)Se2 太阳能电池已经取得了很高的转换效率。然而，金属杂质和低温耐受性阻碍了它们进一步的显着发展。在这里，具有理想优势的 150 μm 厚超薄玻璃被用作 Cu(InGa)Se2 太阳能电池的基板。在后硒化过程中通过简单的方法掺杂钾元素。结果表明KInSe2相存在于K掺杂的Cu(InGa)Se2薄膜中。由于 K 掺入薄膜中可以形成准液态碱金属 Se 化合物并提高薄膜的致密性，K 掺杂的 CIGS 薄膜比原始薄膜更致密。掺入 K 的 CIGS 薄膜表现出增强的 p 型导电性和不同的表面能水平。最后，K掺杂的Cu(InGa)Se2太阳能电池实现了8.3%的最佳效率，比原始太阳能电池高出43%。太阳能电池性能和稳定性的研究表明，K 的掺入延缓了循环弯曲过程中器件的性能下降。