We provide physical insights into the performance of ferromagnetic proximity effects in both electronic [electronic density of states (DOS)] and thermodynamic features [electronic heat capacity (EHC) and the Pauli spin paramagnetic susceptibility (PSPS)] of topological crystalline insulator SnTe (001) and related thin films. We implement the low-energy Hamiltonian, the Green’s function method and the Boltzmann approach. First, we find a gapless phase for SnTe (001) and a gapped one [due to the hybridization between the front and back surfaces] for SnTe (001) thin film. Second, we observe that EHC (PSPS) of gapless SnTe (001) is smaller (greater) than the gapped SnTe (001) thin film. Third, our results show that an exchange field-dependent gap opens in gapless SnTe (001), leading to the increase (decrease) of EHC (PSPS). Fourth, we explain that for exchange fields smaller/greater than the hybridization potential, the inherent gap decreases in SnTe (001) thin film, while it closes if the exchange field becomes equal to the hybridization potential, resulting in the increase (decrease) of EHC (PSPS).

我们对拓扑晶体绝缘子SnTe（001）的电子[态电子密度（DOS）]和热力学特征[电子热容（EHC）和保利自旋顺磁化率（PSPS）]中的铁磁邻近效应的性能提供了物理见解。 ）及相关薄膜。我们实现了低能哈密顿量，格林函数方法和玻尔兹曼方法。首先，我们发现SnTe（001）的无间隙相和SnTe（001）薄膜的[由于正反两面之间的杂化]有间隙的相。其次，我们观察到无间隙SnTe（001）的EHC（PSPS）比有间隙的SnTe（001）薄膜要小（更大）。第三，我们的结果表明，与交换场有关的间隙在无间隙的SnTe（001）中打开，从而导致EHC（PSPS）的增加（减少）。第四，