The interface of Cu/epoxy molding compound composite (Cu/EMC) faces threats from water and ionic compounds, which can induce the delamination of the Cu/EMC, and thus, affect the reliability of the most widely used composite in the semiconductor industry. Herein, we proposed a thin SiON interfacial layer converted from an inorganic polymer of perhydropolysilazane (PHPS), which not only improved the bonding strength of the Cu/EMC by up to 57% but also increased the durability of Cu/EMC in water and saturated NaCl solution. This thin interfacial layer has a negligible influence on the thermal conductive behavior of Cu/EMC, which is a vital parameter in microelectronic encapsulation. The interfacial bonding mechanism has been investigated, which verified a covalent bonding between Cu and SiON, as well as a synergistic effect of hydrogen bonding and mechanical interlocking between the EMC and SiON. This work thus presents a promising strategy to construct thin SiON interfacial layers to improve the bonding strength and increase the durability for Cu/EMC composites.

Cu /环氧模塑复合材料（Cu / EMC）的界面面临水和离子化合物的威胁，这可能导致Cu / EMC分层，从而影响半导体行业中使用最广泛的复合材料的可靠性。在这里，我们提出了一种由全氢聚硅氮烷（PHPS）的无机聚合物转化而来的薄的SiON界面层，它不仅使Cu / EMC的结合强度提高了57％，而且还提高了Cu / EMC在水中和饱和状态下的耐久性。氯化钠溶液。这种薄的界面层对Cu / EMC的导热性能的影响可以忽略不计，Cu / EMC的导热性能是微电子封装中的重要参数。研究了界面键合机理，证实了铜与SiON之间的共价键合，以及EMC和SiON之间氢键键合和机械互锁的协同效应。因此，这项工作为构建薄的SiON界面层以提高键合强度并提高Cu / EMC复合材料的耐久性提供了一种有前途的策略。