Abstract To study the relationship between the exchange bias effect and the resonance frequency of magnetic nanofilms, FeNi and FeNi/FeMn exchange-coupled films were fabricated on a silicon substrate by magnetron sputtering deposition. The static and dynamic magnetic properties of the multilayer films were investigated using a vibrating sample magnetometer (VSM) and a vector network analyzer (VNA). The VSM results indicate that after introducing the FeMn layer, the exchange bias field increased to 62 Oe and the magnetic anisotropy field shifted from 6 to 107 Oe. The VNA results show that the resonance frequency increased from 0.72 to 2.8 GHz, originating from the interface exchange coupling strength. In addition, as a probe for the surface and interface structure, a time-of-flight polarized neutron reflectometer was used to observe the microstructure of the multilayer films. The diffusion with a 2.5 nm thickness between the multilayer films was observed by the polarized neutron reflection experiment, further illustrating that the exchange bias effect is derived from the interaction between the FeNi/FeMn layers. It is concluded that the magnetic induction of a FeNi layer is 0.98 T through fitting the data obtained from the polarized neutron reflection experiment.

中文翻译：

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基于极化中子反射计的 FeNi/FeMn 纳米薄膜交换偏置调节共振频率

摘要 为研究磁性纳米薄膜的交换偏置效应与共振频率之间的关系，采用磁控溅射沉积在硅衬底上制备了FeNi和FeNi/FeMn交换耦合薄膜。使用振动样品磁强计 (VSM) 和矢量网络分析仪 (VNA) 研究了多层薄膜的静态和动态磁性能。VSM 结果表明，在引入 FeMn 层后，交换偏置场增加到 62 Oe，磁各向异性场从 6 Oe 转移到 107 Oe。VNA 结果表明，共振频率从 0.72 GHz 增加到 2.8 GHz，这源于界面交换耦合强度。此外，作为表面和界面结构的探针，飞行时间偏振中子反射计用于观察多层膜的微观结构。通过偏振中子反射实验观察到多层膜之间2.5 nm厚度的扩散，进一步说明交换偏置效应源自FeNi/FeMn层之间的相互作用。通过对极化中子反射实验得到的数据进行拟合，得出FeNi层的磁感应强度为0.98 T。