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Direct measurement of resistivity in destructive pulsed magnetic fields
Review of Scientific Instruments ( IF 1.6 ) Pub Date : 2020-03-01 , DOI: 10.1063/1.5127773
Yoshimitsu Kohama 1 , Fuyuki Nabeshima 2 , Atsutaka Maeda 2 , Akihiko Ikeda 1 , Yasuhiro H. Matsuda 1
Affiliation  

A simple method for measuring electrical resistivity under destructive pulsed magnetic fields is presented. This method uses pick-up voltage as the power source to allow the measurement of the absolute value of resistivity in ultra-high magnetic fields above 100 T. The experimental setup and its operation are described in detail, and its performance is demonstrated using critical field measurements of thin-film FeSe0.5Te0.5 samples. Possible scientific applications of this setup in high magnetic fields as well as in any other environment with a high field sweep rate are also discussed.

中文翻译:

在破坏性脉冲磁场中直接测量电阻率

介绍了一种在破坏性脉冲磁场下测量电阻率的简单方法。该方法以拾取电压为电源,可以测量100T以上超高磁场中电阻率的绝对值。 详细描述了实验装置及其操作,并使用临界场证明了其性能薄膜 FeSe0.5Te0.5 样品的测量。还讨论了这种设置在高磁场以及任何其他具有高场扫描速率的环境中可能的科学应用。
更新日期:2020-03-01
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