Group 14 elemental post‐graphene materials receive much attention because of their outstanding properties, typically, as robust 2D topological insulators. Their heterostructures are a main target in view of disruptive applications. Here, the realization of striking in‐plane lateral heterostructures between germanene and stanene are shown, which are sustainable 2D Ge‐ and Snbased graphene analogs, but with a strong intrinsic spin–orbit coupling. A unique combination of atomic segregation epitaxy (ASE) and molecular beam epitaxy (MBE) for the in situ continuous fabrication of nearly atomically precise lateral multijunction heterostructures, respectively, consisting of atom‐thin germanene and stanene on a Ag(111) thin film is used. Scanning tunneling microscopy (STM) observations at atomic scale and low‐energy electron diffraction testify that germanene and stanene sheets without intermixing are prepared simultaneously on the same terraces at wide scale: tin and germanium atoms neither exchange their sites nor adsorb on the germanene and stanene sheets. The atomic structure of the boundary between germanene and stanene is derived from STM images, while scanning tunneling spectroscopy reveals key electronic features at the heterojunction. This innovative synergetic approach of ASE and MBE growths offers great flexibility for the realization of unprecedented lateral 2D heterostructures.

中文翻译：

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锗烯和锡烯横向异质结构的连续生长

第14组元素后石墨烯材料因其出色的性能而备受关注，通常用作坚固的2D拓扑绝缘体。考虑到破坏性应用，它们的异质结构是主要目标。在此，显示了锗烯和锡烯之间惊人的面内横向异质结构的实现，这是可持续的2D Ge和Sn基石墨烯类似物，但具有很强的固有自旋轨道耦合。原子偏析外延（ASE）和分子束外延（MBE）的独特组合，用于在Ag（111）薄膜上原位连续制造近原子精确的横向多结异质结构，分别由原子稀薄的锗烯和锡烯组成。用过的。扫描隧道显微镜（STM）的原子级观察和低能电子衍射证明，没有互混的锗和锡片是在同一阶地上同时大规模制备的：锡和锗原子既不交换位置也不吸附在锗和锡上床单。锗和锡之间的边界的原子结构来自STM图像，而扫描隧道光谱揭示了异质结的关键电子特征。ASE和MBE增长的这种创新的协同方法为实现前所未有的横向2D异质结构提供了极大的灵活性。锡和锗原子既不交换位置，也不吸附在锗和锡板上。锗和锡之间的边界的原子结构来自STM图像，而扫描隧道光谱揭示了异质结的关键电子特征。ASE和MBE增长的这种创新的协同方法为实现前所未有的横向2D异质结构提供了极大的灵活性。锡和锗原子既不交换位置，也不吸附在锗和锡板上。锗和锡之间的边界的原子结构来自STM图像，而扫描隧道光谱揭示了异质结的关键电子特征。ASE和MBE增长的这种创新的协同方法为实现前所未有的横向2D异质结构提供了极大的灵活性。