当前位置: X-MOL 学术Phys. Chem. Chem. Phys. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
The total dose effect of γ-ray induced domain evolution on α-In2Se3 nanoflakes
Physical Chemistry Chemical Physics ( IF 3.3 ) Pub Date : 2020/03/30 , DOI: 10.1039/d0cp00512f
Pengfei Hou 1, 2, 3, 4, 5 , Yun Chen 1, 2, 3, 4, 5 , Xinhao Wang 1, 2, 3, 4, 5 , Yang Lv 1, 2, 3, 4, 5 , Hongxia Guo 1, 2, 3, 4, 5 , Jinbin Wang 1, 2, 3, 4 , Xiangli Zhong 1, 2, 3, 4 , Xiaoping Ouyang 1, 2, 3, 4
Affiliation  

Two-dimensional ferroelectric materials can maintain stable polarization with atomic layer thickness, and they have a wide range of technological applications in transistors, resistive memories, energy collectors and other multi-functional sensors for highly integrated flexible electronics. Domain evolution should be considered when 2d ferroelectric material-based devices are applied in a radiation environment, which may induce radiation damage and performance degradation. In this work, we investigate the domain evolution and photodetection performance degradation of α-In2Se3 nanoflakes induced by the total dose effect of 60Co γ-rays. The phonon modes change with an increase in total dose, while the domain structure changes in α-In2Se3 based transistors. Domain evolution may be one of the main reasons for the photoresponsivity degradation of these transistors. This investigation can provide a solid base for future research, and immediate applications in 2d ferroelectric material-based devices can be contemplated.

中文翻译:

γ射线诱导的畴演化对α-In2Se3纳米片的总剂量效应

二维铁电材料可以在原子层厚度下保持稳定的极化,并且在晶体管,电阻式存储器,能量收集器和其他用于高度集成的柔性电子产品的多功能传感器中具有广泛的技术应用。在辐射环境中使用基于2d铁电材料的器件时,应考虑域演化,这可能会导致辐射损伤和性能下降。在这项工作中,我们研究α-中的域演化和光检测性能退化2个3个通过的总剂量效应诱导的纳米片60共同γ射线。的声子模式与增加总剂量变化,而结构域结构改变α-在2Se 3基晶体管。域演化可能是这些晶体管的光响应性下降的主要原因之一。该研究可以为将来的研究提供坚实的基础,并且可以考虑在基于2d铁电材料的器件中的直接应用。
更新日期:2020-04-08
down
wechat
bug