Abstract Silver doped indium sulfide (In2S3:Ag) thin layers were prepared by spray pyrolysis. The Ag concentration varies in the range of 0–6 at%. The X-ray diffraction (XRD) indicates the presence of cubic phase of β-In2S3 and the crystallite size values exhibit a maximum at an Ag concentration of 4%. In addition, morphological analysis by atomic force microscopy (AFM) shows that the film surface is continuous, compact, free of cracks and depends on the Ag concentration. This observation is remarkable by evolution of surface roughness values. The films reveal a semiconductor behavior. This is observed because the electrical conductance increases with the increase of measurement temperature and the analysis of the Nyquist diagram shows the appearance of half circles, whose radius decreases by increasing the temperature from 300 K to 600 K. The electrical equivalent circuit of undoped In2S3 and In2S3:Ag4% at 460 K and 470 K contains two components connected in serial. The first is composed of a resistance R1, an inductance L and a constant phase element CPE1 in parallel and the other covers R2 and a constant phase element CPE2 that are connected in parallel. Inductive and capacitive effects exist in these materials and they depend on frequency. For Ag concentration equal or greater than 4%, the equivalent circuit is a parallel association of a resistor with a constant phase element. The activation energy is minimum for an Ag concentration of 4%.

中文翻译：

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喷涂 In2S3:Ag 薄膜的电传输

摘要 采用喷雾热解法制备了掺银硫化铟(In2S3:Ag)薄层。Ag 浓度在 0-6 at% 的范围内变化。X 射线衍射 (XRD) 表明存在 β-In2S3 立方相，并且晶粒尺寸值在 Ag 浓度为 4% 时表现出最大值。此外，原子力显微镜 (AFM) 的形态分析表明，薄膜表面是连续的、致密的、无裂纹的，并且取决于 Ag 浓度。通过表面粗糙度值的演变，这种观察是显着的。这些薄膜显示出半导体行为。这是因为电导率随着测量温度的增加而增加，奈奎斯特图的分析显示半圆的出现，其半径随着温度从 300 K 增加到 600 K 而减小。460 K 和 470 K 下未掺杂的 In2S3 和 In2S3:Ag4% 的等效电路包含两个串联的组件。第一个由电阻R1、电感L和恒相元件CPE1并联组成，另一个覆盖R2和并联的恒相元件CPE2。这些材料中存在电感和电容效应，它们取决于频率。对于等于或大于 4% 的 Ag 浓度，等效电路是电阻器与恒定相位元件的并联组合。Ag 浓度为 4% 时，活化能最小。电感L和恒相元件CPE1并联，另一个覆盖R2和恒相元件CPE2并联。这些材料中存在电感和电容效应，它们取决于频率。对于等于或大于 4% 的 Ag 浓度，等效电路是电阻器与恒定相位元件的并联组合。Ag 浓度为 4% 时，活化能最小。电感L和恒相元件CPE1并联，另一个覆盖R2和恒相元件CPE2并联。这些材料中存在电感和电容效应，它们取决于频率。对于等于或大于 4% 的 Ag 浓度，等效电路是电阻器与恒定相位元件的并联组合。Ag 浓度为 4% 时，活化能最小。