Abstract In this study, the variation of Schottky gate contact characteristics of InP-based HEMTs have been studied with the irradiation fluence range from 1 × 1014 cm-2 to 1 × 1016 cm-2 at 1 MeV. The results show that the reverse gate current increases with irradiation fluence, and the reason is that electrons would be released from the induced interface defects and pass through the Schottky barrier under reverse bias. Additionally, the forward gate current decreases and the series resistance of gate contact increases with electron fluence, because the carrier mobility and concentration should be deteriorated by the induced defects in bulk materials and surface state defects at contact interface. It is also found that the ideality factor n increases and the Schottky barrier height ΦB decreases with irradiation fluence, which can be attributed to the radiation induced interface defects at contact interface.

中文翻译：

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1 MeV电子辐照对InP基HEMTs栅极接触特性的影响

摘要 在这项研究中，研究了 InP 基 HEMT 的肖特基栅极接触特性的变化，辐照通量范围为 1 × 1014 cm-2 至 1 × 1016 cm-2，1 MeV。结果表明，反向栅极电流随着辐照通量的增加而增加，其原因是电子会从感应界面缺陷中释放出来并在反向偏压下穿过肖特基势垒。此外，随着电子注量的增加，正向栅极电流减小，栅极接触的串联电阻增加，因为载流子迁移率和浓度会因体材料中的感应缺陷和接触界面的表面态缺陷而恶化。还发现理想因子 n 增加，肖特基势垒高度 ΦB 随辐照通量而减小，