Abstract A room-temperature bonding process based on Mo/Au nano-layer was applied to bond GaN on Si wafers in atmospheric air. The analytical test results show that a low bonding defect density (0.2%) and a strong bonding strength (10.0 MPa) were achieved for the GaN/Si sample bonded with Mo/Au nano-layer. The bonding defect density of the bonded GaN/Si sample remained mostly unchanged and each of Au/Au, Au/Mo/GaN and Au/Mo/Si interfaces had a strong adhesion strength after 1000-cycles thermal cycling testing. In addition, Mo/Au ohmic contact on n-type GaN was realized by Ar+ ion beam treatment on the GaN surface.

中文翻译：

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大气中Mo/Au纳米层键合GaN与Si片的键合质量研究

摘要 采用基于Mo/Au纳米层的室温键合工艺，在大气中将GaN键合在Si片上。分析测试结果表明，结合 Mo/Au 纳米层的 GaN/Si 样品实现了低键合缺陷密度（0.2%）和强键合强度（10.0 MPa）。经过1000次循环热循环测试后，结合的GaN/Si样品的结合缺陷密度基本保持不变，Au/Au、Au/Mo/GaN和Au/Mo/Si界面均具有很强的粘附强度。此外，通过对GaN表面进行Ar+离子束处理，实现了n型GaN上的Mo/Au欧姆接触。