The exponential proliferation of data during the information age has required the continuous exploration of novel storage paradigms, materials, and devices with increasing data density. As a step toward the ultimate limits in data density, the development of an electrically controllable single‐molecule memristive element is reported. In this device, digital information is encoded through switching between two isomer states by applying a voltage signal to the molecular junction, and the information is read out by monitoring the electrical conductance of each isomer. The two states are cycled using an electrically controllable local‐heating mechanism for the forward reaction and catalyzed by a single charge‐transfer process for the reverse switching. This single‐molecule device can be modulated in situ, is fully reversible, and does not display stochastic switching. The I –V curves of this single‐molecule system also exhibit memristive character. These features suggest a new approach for the development of molecular switching systems and storage‐class memories.

中文翻译：

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基于电控单分子反应的忆阻元件。

在信息时代，数据呈指数级增长，需要不断探索新颖的存储范式，材料和设备，以提高数据密度。作为迈向数据密度极限的一步，据报道，开发了一种电可控的单分子忆阻元件。在该装置中，通过向分子结施加电压信号，通过在两种异构体状态之间切换来对数字信息进行编码，并且通过监视每种异构体的电导率来读出信息。这两种状态通过电可控的局部加热机制循环进行正向反应，并通过单个电荷转移过程进行催化以进行反向切换。这种单分子设备可以原位调制，完全可逆，并且不显示随机切换。的该单分子系统的I – V曲线也具有忆阻特性。这些功能为开发分子交换系统和存储级存储器提供了一种新方法。