We report on the optical and electrical properties of MgZnO/Ag/MgZnO (MAM) grid electrodes grown at room temperature; these are proposed as an alternative to metal-based grid electrodes to meet the requirement for high stability in a harsh environment. The optical transmittance of Ag grid electrodes improved when the Ag grid layer was embedded in an MgZnO grid layer regardless of the fill factor. This improvement depends critically on the Ag grid layer thickness in the MAM grid electrodes. The Haack figure of merit for a MAM grid electrode with a 20 nm-thick Ag grid layer was approximately threefold higher than that of an Ag grid electrode. The electrode has an average transmittance of 85.8% at wavelengths range from 400 to 1100 nm and a sheet resistance of 26.9 Ω/sq. These results indicate that MAM grid electrodes can be an alternative to metal-based grid electrodes in optoelectronic devices that require stable wideband operation in a harsh environment and over a wide wavelength region.

我们报告了在室温下生长的MgZnO / Ag / MgZnO（MAM）栅电极的光电性能；这些被提议作为金属基栅电极的替代品，以满足苛刻环境下对高稳定性的要求。当将Ag栅格层嵌入MgZnO栅格层中时，无论填充因子如何，Ag栅格电极的透光率均得到改善。该改进主要取决于MAM栅极中的Ag栅极层的厚度。具有20 nm厚的Ag栅层的MAM栅电极的Haack品质因数比Ag栅电极的高约三倍。该电极在400至1100 nm波长范围内的平均透射率为85.8％，薄层电阻为26.9Ω/ sq。