Green electronics is an emerging field of research which aims to manufacture devices in an environmentally friendly and sustainable way. Usually, the involved electronic materials are naturally occurring and non-toxic. Also, they can be processed using simple, low energy deposition processes and fabrication techniques. In this work, we present low voltage organic field-effect transistors (OFETs) using almond gum (AG) as the gate dielectric. AG is a natural, biodegradable insulator material that can be directly collected from almond trees and used without any further purification. Moreover, AG possesses interesting properties such as water solubility, ease of processing, good insulation, low leakage current, good film quality, and high capacitance making it a promising dielectric for OFET devices. Bottom gate/bottom contact p-channel OFETs have been processed on glass substrates with poly (3,6-di (2-thien-5-yl)-2,5-di (2-octyldodecyl)-pyrrolo [3,4-c] pyrrole-1,4-dione)thieno [3,2-b] thiophene) (DPPTTT) polymethyl methacrylate (PMMA) blend as the active layer and gold as the source and drain electrodes. The transistors operate at low voltage (V_GS ≤ 3 V), with threshold voltages V_th as low as −0.8 V, saturated field effect mobilities μ_sat above 0.75 cm² V⁻¹ s⁻¹, subthreshold swings SS around 270 mV/dec and ON/OFF current ratio equal to 10³. The combined favourable properties of both almond gum and low voltage operated OFET devices have a high potential to pave a way towards using naturally occurring, biodegradable electronic materials in future disposable sensors or throwaway, low-end electronics.

绿色电子是一个新兴的研究领域，旨在以环保和可持续的方式制造设备。通常，涉及的电子材料是天然存在的且无毒。而且，可以使用简单的低能耗沉积工艺和制造技术对其进行处理。在这项工作中，我们介绍了使用杏仁胶（AG）作为栅极电介质的低压有机场效应晶体管（OFET）。AG是一种天然的，可生物降解的绝缘材料，可以直接从杏仁树中收集，无需进一步纯化即可使用。此外，AG具有令人感兴趣的特性，例如水溶性，易加工性，良好的绝缘性，低漏电流，良好的薄膜质量和高电容，使其成为用于OFET器件的有希望的电介质。底栅/底接触p沟道OFET已在玻璃基板上用聚（3,6-二（2-噻吩-5-基）-2,5-二（2-辛基十二烷基）-吡咯[3,4- c]吡咯-1,4-二酮）噻吩并[3,2-b]噻吩（DPPTTT）聚甲基丙烯酸甲酯（PMMA）共混作为活性层，金作为源电极和漏电极。晶体管在低压（V_GS  ≤3 V）中，用阈值电压V_个低至-0.8 V，μ饱和场效应迁移率_坐在上面0.75厘米²  V ^-1 小号^-1，亚阈值摆幅SS约270毫伏/ DEC和ON / OFF电流比等于至10 ³。杏仁胶和低压操作的OFET器件的综合良好性能具有很大的潜力，可为在未来的一次性传感器或一次性低端电子产品中使用天然存在的，可生物降解的电子材料铺平道路。