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Fano effect in resonant Raman spectrum of CdTe
Solid State Communications ( IF 2.1 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.ssc.2020.113895
C.I. Medel-Ruiz , H.Pérez Ladrón de Guevara , J.R. Molina-Contreras , C. Frausto-Reyes

Abstract In this work, we show a line-shape analysis of the resonant Raman scattering spectrum of un-doped CdTe single crystal. We found that the main peak correspondent to the longitudinal-optic (LO) phonon mode is asymmetrically broadened toward the high-frequency side. We attributed this asymmetry to an electron-phonon coupling effect, which was demonstrated using a Fano-type function to describe the spectrum line-shape. In our fitting we have additionally considered the weak contribution (in the low-frequency region) of two added phonons, whose presence is attributed to the rupture of the symmetry due to the surface. Results show an excellent agreement between the experimental data and the fitting model, where Fano asymmetry parameter was found to be q = 4.5 . The results obtained, are a tool that contributes to the understanding of the origin of LO phonon line-shape asymmetry of the Raman spectrum; and its use will be helpful to investigate the strength of electron-phonon coupling in semiconductors.

中文翻译:

CdTe 共振拉曼光谱中的 Fano 效应

摘要 在这项工作中,我们展示了未掺杂 CdTe 单晶的共振拉曼散射光谱的线形分析。我们发现对应于纵向光学 (LO) 声子模式的主峰向高频侧不对称地展宽。我们将这种不对称性归因于电子-声子耦合效应,该效应使用 Fano 型函数来描述谱线形状来证明。在我们的拟合中,我们还考虑了两个添加声子的微弱贡献(在低频区域),其存在归因于表面对称性的破裂。结果显示实验数据与拟合模型之间具有极好的一致性,其中发现 Fano 不对称参数为 q = 4.5。得到的结果,是有助于理解拉曼光谱的 LO 声子线形不对称起源的工具;它的使用将有助于研究半导体中电子-声子耦合的强度。
更新日期:2020-05-01
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