Abstract The films with AlSb/Cu/AlSb/Cu/AlSb/Cu structure were deposited on glass substrate using copper target and aluminum-antimony alloying target by magnetron sputtering technology, and then annealed at different temperatures to obtain Cu-doped AlSb thin films. The phase, vibration modes, optical, electrical properties of the as-prepared AlSb:Cu films were systematically investigated using XRD, Raman spectroscopy, UV-VIS-NIR and two-probe high temperature system. XRD measurement and Raman spectroscopy confirmed that when the annealing temperature was 500 °C, the AlSb:Cu film had high crystallinity. The band gap of AlSb:Cu film was 1.18 eV at the optimum annealing temperature of 500 °C. The effect of different annealing temperature on the band gap of AlSb:Cu thin films was not obvious. The results of the electrical measurement showed that the conductivity activation energy of AlSb:Cu films was 0.476 eV. After annealing treatment, the atomic ratio of the AlSb:Cu film was 18.10:21.88:2.90 (Al:Sb:Cu). In addition, compared with the undoped AlSb thin film, the copper-doped can effectively slow the deliquescence speed.

中文翻译：

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磁控溅射法制备的 AlSb:Cu 薄膜的结构、光学、电学和潮解特性

摘要 以铜靶和铝锑合金靶为载体，采用磁控溅射技术在玻璃基板上沉积AlSb/Cu/AlSb/Cu/AlSb/Cu结构薄膜，然后在不同温度下退火，得到Cu掺杂AlSb薄膜。使用XRD、拉曼光谱、UV-VIS-NIR和双探针高温系统系统地研究了所制备的AlSb:Cu薄膜的相、振动模式、光学、电学性质。XRD 测量和拉曼光谱证实，当退火温度为 500 °C 时，AlSb:Cu 薄膜具有高结晶度。在 500 °C 的最佳退火温度下，AlSb:Cu 薄膜的带隙为 1.18 eV。不同退火温度对AlSb:Cu薄膜带隙的影响不明显。电学测量结果表明，AlSb:Cu 薄膜的电导活化能为 0.476 eV。退火处理后，AlSb:Cu薄膜的原子比为18.10:21.88:2.90（Al:Sb:Cu）。此外，与未掺杂的AlSb薄膜相比，铜掺杂可以有效减缓潮解速度。