Abstract The Fano resonance photoemission study of the Pb0.97Ge0.03Te crystal doped by sequential deposition of Sm atoms on the clean [111] surface was performed to determine the contribution of the Sm4f electrons to the valence band of the Pb0.97Ge0.03Te/Sm crystal and to monitor the process of introduction of Sm into the substrate crystal host lattice. After each deposition step and after subsequent thermal treatment the contribution of both Sm2+ and Sm3+ ions were assessed. The analysis of the acquired data and a comparison with the results of similar studies of Sm doped CdTe, ZnO and GaN show that the thermal treatment at 250 °C of the Sm/Pb0.97Ge0.03Te system leads to conversion of Sm2+ to Sm3+ and probably to Sm4+ which corresponds to the valence of the cations in the substrate crystal host lattice.

中文翻译：

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Sm在Pb0.97Ge0.03Te晶体上的Fano共振光电发射研究

摘要 对通过在清洁的 [111] 表面上顺序沉积 Sm 原子掺杂的 Pb0.97Ge0.03Te 晶体进行 Fano 共振光电发射研究，以确定 Sm4f 电子对 Pb0.97Ge0.03Te/的价带的贡献。 Sm 晶体并监测 Sm 引入衬底晶体主晶格的过程。在每个沉积步骤之后和随后的热处理之后，评估 Sm2+ 和 Sm3+ 离子的贡献。对获得的数据的分析以及与 Sm 掺杂的 CdTe、ZnO 和 GaN 的类似研究结果的比较表明，Sm/Pb0.97Ge0.03Te 系统在 250°C 下的热处理导致 Sm2+ 转化为 Sm3+ 和可能是 Sm4+，它对应于衬底晶体主晶格中阳离子的价态。