Abstract The electrical and optical properties of nonpolar a-plane GaN films with various silane flow rates were studied intensively utilizing temperature-dependent Hall-effect and photoluminescence measurements. The electron Hall mobility was found to change from increase to decrease while the silane flow beyond 16.06 nmol/min. It was inferred that the primary scattering mechanism of Si-doped GaN transferred from ionized impurity to thermal lattice vibration with the temperature over 450 K as more disordered lattice vibration was caused by Si doping. Meanwhile, the band-gap of nonpolar a-plane GaN film demonstrated a 32.56 meV narrowing owing to the Si-doping induced band-gap narrowing effect. Moreover, the basal stacking faults (BSFs) and Ga vacancy-related emission were evidently suppressed, and a decrease of 12.02% for BSFs density was achieved with Si-doping.

中文翻译：

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具有不同 Si 掺杂水平的非极性 a 面 GaN 薄膜的温度相关电学和光学研究

摘要 利用温度相关的霍尔效应和光致发光测量，深入研究了具有不同硅烷流量的非极性 a 面 GaN 薄膜的电学和光学性质。当硅烷流量超过 16.06 nmol/min 时，发现电子霍尔迁移率从增加变为减少。据推测，Si掺杂的GaN的主要散射机制从电离杂质转移到温度超过450 K的热晶格振动，因为Si掺杂引起更多的无序晶格振动。同时，由于 Si 掺杂引起的带隙变窄效应，非极性 a 面 GaN 膜的带隙变窄了 32.56 meV。此外，基底堆垛层错（BSFs）和Ga空位相关发射明显受到抑制，减少了12。