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Stacking-dependent topological phase in bilayerMBi2Te4(M=Ge,Sn,Pb)
Physical Review B ( IF 3.7 ) Pub Date : 2020-03-27 , DOI: 10.1103/physrevb.101.115427
Rui Peng , Yandong Ma , Hao Wang , Baibiao Huang , Ying Dai

Inspired by the breakthroughs of twisted bilayer graphene, stacking-dependent phenomena are recently emerging as fascinating objects of condensed matter research, harboring a variety of new physics. However, current studies are restricted to electronic, superconducting and magnetic properties. Here, using first-principles calculations, we reveal the connection between stacking order and topological property in bilayer MBi2Te4(M=Ge,Sn,Pb). We show the stacking order determines the topological property. Upon changing the stacking order, one can achieve topological phase transition between trivial and nontrivial states. We unveil that this stacking-dependent topological property is attributed to the interlayer Tepz orbitals coupling, which is closely related to the stacking order. Our work not only expands the scope of stacking-dependent properties but also provides a promising experimental platform to study this novel stacking-dependent topological property.

中文翻译:

双层MBi2Te4(M = Ge,Sn,Pb)中依赖堆积的拓扑相

受扭曲的双层石墨烯的突破的启发,依赖于堆积的现象最近成为凝聚态物质研究的引人入胜的对象,具有各种新的物理学。但是,当前的研究仅限于电子,超导和磁性能。在这里,使用第一性原理计算,我们揭示了堆叠顺序和双层拓扑性质之间的联系中号一世2ŤË4中号=通用电器铅含量。我们显示了堆叠顺序决定了拓扑属性。一旦改变堆叠顺序,就可以实现平凡和不平凡的状态之间的拓扑相变。我们揭示了这种依赖于堆栈的拓扑属性归因于中间层-pž轨道耦合,这与堆积顺序密切相关。我们的工作不仅扩展了依赖于堆叠的特性的范围,而且为研究这种新颖的依赖于堆叠的拓扑特性提供了有希望的实验平台。
更新日期:2020-03-28
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