Abstract The SiC/graphene aerogels have been widely studied in microwave absorption, but the influence mechanism of SiC microwave absorption was not clear. Herein, we prepared the SiC whiskers/reduced graphene oxide aerogels (SiCw/rGOA) by in-situ growth (IS) and physical mixing (PM) methods and investigated the influence of the C-Si heterojunction on microwave absorption performance. The results show that the incorporation of SiCw can improve the interfacial impedance between free space and absorber compare to the pure rGOA, resulting in the excellent microwave absorption property. The polarization loss induced by defects and interfaces is an important factor for microwave attenuation. Especially, the formation of the C-Si heterojunction interface between SiCw and reduced graphene oxide in SiCw/rGOA-IS enhances the polarization loss at low frequency (2–6 GHz). The minimum reflection loss (RL) value of SiCw/rGOA-IS reaches to −60.05 dB at 17.12 GHz with a thickness of 2.00 mm, and its effective absorption bandwidth (EAB, below −10 dB) is up to 6.72 GHz, covering whole Ku band. Furthermore, this as-prepared absorbing material exhibits excellent mechanical and thermal properties after compound with polydimethylsiloxane.

中文翻译：

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在 SiC 晶须/还原氧化石墨烯气凝胶中构建 C-Si 异质结界面以改善微波吸收

摘要 SiC/石墨烯气凝胶在微波吸收方面得到了广泛的研究，但对SiC微波吸收的影响机制尚不清楚。在此，我们通过原位生长 (IS) 和物理混合 (PM) 方法制备了 SiC 晶须/还原氧化石墨烯气凝胶 (SiCw/rGOA)，并研究了 C-Si 异质结对微波吸收性能的影响。结果表明，与纯 rGOA 相比，SiCw 的掺入可以改善自由空间和吸收体之间的界面阻抗，从而获得优异的微波吸收性能。缺陷和界面引起的极化损耗是微波衰减的重要因素。尤其，在 SiCw/rGOA-IS 中 SiCw 和还原氧化石墨烯之间形成 C-Si 异质结界面增强了低频（2-6 GHz）下的极化损耗。SiCw/rGOA-IS 的最小反射损耗 (RL) 值在 17.12 GHz 处达到 -60.05 dB，厚度为 2.00 mm，其有效吸收带宽（EAB，低于 -10 dB）可达 6.72 GHz，覆盖整个库乐队。此外，这种制备的吸收材料在与聚二甲基硅氧烷复合后表现出优异的机械和热性能。