We report on optical properties of undoped ZnO and Boron doped ZnO (B-ZnO) thin films prepared by sol-gel dip coating technique. Optical transmittance and reflectance were investigated to get a deeper insight into the optical properties and optoelectronic behavior of B-ZnO thin films. The main aim of this work is to resolve the major challenge facing researchers working on thin films of finding the proper physical model that explains the correlations between the film thickness and the optical band gap. We propose a novel derived mathematical model to interpret the experimental transmittance as a function of wavelength (λ) of amorphous and crystal semiconductors and dielectric thin films. The proposed model reproduces the values of the optical band gap energy of the investigated thin films that are in good agreement with Tauc plot method and other optical models. We found that optical band gap of B-ZnO has decreased from 3.434 eV to 3.256 eV as boron concentration in ZnO films is increased from 0% to 10%. In addition, we found that Urbach energy values have drastically decreased as the concentration of boron introduced into ZnO thin films was increased. We implemented the newly derived model to reproduce optical properties such as the refractive index dispersion and oscillator parameters that were investigated using other different optical models such as Cauchy, Wemple Di-Domenico, Sellemeier, Spitzer-Fan and Drude. Our results indicate that optical parameters of (B-ZnO) thin films are strongly dependent on boron concentration.

我们报告了通过溶胶-凝胶浸涂技术制备的未掺杂的ZnO和掺硼的ZnO（B-ZnO）薄膜的光学性能。对光学透射率和反射率进行了研究，以更深入地了解B-ZnO薄膜的光学性质和光电行为。这项工作的主要目的是解决研究薄膜的研究人员面临的主要挑战，即寻找合适的物理模型来解释薄膜厚度和光学带隙之间的关系。我们提出了一种新颖的数学模型，以将实验透射率解释为非晶和晶体半导体以及介电薄膜的波长（λ）的函数。所提出的模型再现了所研究的薄膜的光学带隙能量的值，其与Tauc绘图法和其他光学模型非常吻合。我们发现，随着ZnO薄膜中硼浓度从0％增加到10％，B-ZnO的光学带隙已从3.434 eV减小到3.256 eV。此外，我们发现随着引入ZnO薄膜中的硼浓度的增加，Urbach能量值急剧下降。我们实施了新近推导的模型，以重现光学特性，例如折射率色散和振荡器参数，并使用其他不同的光学模型（例如柯西，温普尔·迪多梅尼科，塞勒迈尔，斯皮策凡和德鲁德）进行了研究。我们的结果表明（B-ZnO）薄膜的光学参数强烈依赖于硼浓度。