A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of $\sim 2\times 10^{-{5}}$ A/cm² at V_G = V_FB – 1 V in p-substrate Ge (pGe) MOS device can be simultaneously achieved by a hydrogen plasma (H^*) treatment on GeO₂ interfacial layer (IL). It is found that the removal of GeO_x with low oxidation state in GeO₂ IL play crucial roles on electrical characteristics of pGe MOS device. Through a H^* treatment, the electrical and reliability characteristics are improved by a GeO₂ IL with high oxidation state. Therefore, a GeO₂ IL with H^* treatment is promising for high performance pGe MOS devices.

中文翻译：

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通过用 H2 等离子体处理去除 GeOx 中的低氧化态，pGe MOS 器件的低等效氧化物厚度和漏电流

0.58 nm 的低等效氧化层厚度和 0.58 nm 的低栅极漏电流密度 $\sim 2\times 10^{-{5}}$ A/cm ² at V _G = V _FB – p 衬底 Ge (pGe) MOS 器件中的 1 V 可以通过对 GeO ₂界面层 (IL)进行氢等离子体 (H ^* ) 处理来同时实现。发现去除GeO ₂ IL中低氧化态的GeO _x对pGe MOS器件的电学特性起着至关重要的作用。通过H ^*处理，高氧化态GeO ₂ IL提高了电气和可靠性特性。因此，经过H ^*处理的 GeO ₂ IL有望用于高性能 pGe MOS 器件。