A backward diode consisting of all nondegenerate and transparent semiconducting oxides (TSOs) offers promising opportunities for designing multifunctional electronic devices. In this letter, we report the backward diode rectifying behavior in the nondegenerate AgCrO₂/In₂O₃ p-n heterojunction. Both AgCrO₂ and In₂O₃ films are transparent. The decrease of grain boundary in the In₂O₃ film can improve the backward diode rectifying performance. The optimized AgCrO₂/In₂O₃ heterojunction exhibits a very high reverse rectification ratio that exceeds 10³ along with a small tunneling current onset voltage. The backward diode rectifying behavior originates from the electron band-to-band tunneling (BTBT) current in the reverse voltage region, which is induced by type-III band alignment. This study will pave the way for achieving transparent backward diodes by using all nondegenerate TSOs p-n heterojunctions.

中文翻译：

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AgCrO2/In2O3 中的反向二极管整流行为

由所有非简并透明半导体氧化物 (TSO) 组成的反向二极管为设计多功能电子设备提供了有希望的机会。在这封信中，我们报告了非简并 AgCrO ₂ /In ₂ O _{3 中}的反向二极管整流行为 pn异质结。AgCrO ₂和In ₂ O ₃膜都是透明的。In ₂ O ₃薄膜中晶界的减少可以改善反向二极管整流性能。优化的AgCrO ₂ /In ₂ O ₃异质结表现出非常高的反向整流比，超过10 ³以及小的隧道电流起始电压。反向二极管整流行为源于反向电压区域中的电子带间隧穿 (BTBT) 电流，这是由 III 型带对齐引起的。这项研究将为使用所有非退化 TSO 实现透明反向二极管铺平道路pn 异质结。