In this work, we demonstrate a GaN-based $\textit {p-n}$ junction gate (PNJ) HEMT featuring an ${n}$ -GaN/ ${p}$ -GaN/AlGaN/GaN gate stack. Compared to the more conventional ${p}$ -GaN gate HEMT with a Schottky junction between the gate metal and ${p}$ -GaN layer, the $\textit {p-n}$ junction can withstand higher reverse bias at the same peak electric-field as the depletion region extends to both the ${n}$ -side and ${p}$ -side, while exhibiting lower leakage current. The PNJ-HEMT shows a positive threshold voltage ( ${V}_{\text {TH}}$ ) of 1.78 V, a small gate leakage $(\sim 10^{-3}$ mA/mm @ ${V}_{\text {GS}} = {10}\,\, \text {V}$ ). In particular, a large forward gate breakdown voltage of 19.35 V at 25 °C and 19.70 V at 200 °C was achieved with the PNJ-gate HEMT.

中文翻译：

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E 型 pn 结/AlGaN/GaN (PNJ) HEMT

在这项工作中，我们展示了基于 GaN 的 $\textit {pn}$ 结门 (PNJ) HEMT 具有 ${n}$ -氮化镓/ ${p}$ -GaN/AlGaN/GaN 栅堆叠。与更传统的相比 ${p}$ -GaN 栅极 HEMT，栅极金属和栅极之间具有肖特基结 ${p}$ -GaN层， $\textit {pn}$ 在相同的峰值电场下，结可以承受更高的反向偏压，因为耗尽区延伸到两个 ${n}$ -边和 ${p}$ -侧，同时表现出较低的漏电流。PNJ-HEMT 显示正阈值电压 ( ${V}_{\text {TH}}$ ) 的 1.78 V，小的栅极泄漏 $(\sim 10^{-3}$ 毫安/毫米@ ${V}_{\text {GS}} = {10}\,\, \text {V}$ ）。特别是，PNJ 栅极 HEMT 实现了 25°C 时 19.35 V 和 200°C 时 19.70 V 的大正向栅极击穿电压。