Medium states are common anomalies in spin-transfer torque magnetoresistance random access memory (STT-MRAM). In this work, these medium states are systematically studied using an ultrafast characterization system and compared with the normal parallel (P) and antiparallel (AP) states. The medium states that exist in the switching processes both from the AP state to the P state (AP2P) and from the P state to the AP state (P2AP) are presented. To obtain a deeper understanding of the medium states, the temperature and voltage dependences of the state rates are investigated. It is found that the medium states are more persistent at low temperatures and have a state rate with a symmetric voltage dependence. Consequently, it is confirmed that medium states should be one of the sources of bifurcated switching in STT-MRAMs.

中文翻译：

---

自旋转移转矩磁阻随机存取存储器介质状态的系统研究及其对误码率的影响

介质状态是自旋转移矩磁阻随机存取存储器 (STT-MRAM) 中的常见异常。在这项工作中，使用超快表征系统系统地研究了这些介质状态，并与正常平行 (P) 和反平行 (AP) 状态进行了比较。呈现了从AP状态到P状态(AP2P)和从P状态到AP状态(P2AP)的切换过程中存在的介质状态。为了更深入地了解介质状态，研究了状态速率的温度和电压依赖性。发现中等状态在低温下更持久，并且具有具有对称电压依赖性的状态率。因此，证实介质状态应该是 STT-MRAM 中分叉开关的来源之一。