This paper analyzes the effect of high current under illumination stress (HCIS) in self-aligned amorphous indium gallium zinc oxide transistors with Al₂O₃ as high- $\kappa $ gate dielectric. A negative parallel threshold voltage $({V}_{T}$ ) shift with the appearance of hysteresis $(\Delta {V}_{{hys}})$ is observed after HCIS. In contrast to the double ionized oxygen vacancy ( $\text{V}_{\text O}^{\text 2+}$ ) theory, a peroxide donor theory based on ${ab~ initio}$ calculations is proposed to explain the degradation. Several methods are carried out to support the mechanism, including $\Delta {V}_{{hys}}$ generation, stress recovery behavior and capacitance-voltage ${(C-V)}$ measurements. A linear dependence between initial ${V}_{T}$ and negative ${V}_{T}$ shift is observed that further supports the peroxide theory. This work highlights the importance of evaluating the HCIS for oxide base semiconductor devices.

中文翻译：

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以 Al2O3 作为高钾栅极电介质的自对准 a-InGaZnO 薄膜晶体管的高电流和光照应力不稳定性的起源

本文分析了高电流照射应力 (HCIS) 对自对准非晶铟镓锌氧化物晶体管的影响，Al ₂ O ₃作为高 $\kappa $ 栅极电介质。负并联阈值电压 $({V}_{T}$ ) 出现滞后现象 $(\Delta {V}_{{hys}})$ 在 HCIS 后观察到。与双电离氧空位（ $\text{V}_{\text O}^{\text 2+}$ ) 理论，一种基于过氧化物供体的理论 ${ab~ initio}$ 建议计算来解释退化。执行了几种方法来支持该机制，包括 $\Delta {V}_{{hys}}$ 生成、应力恢复行为和电容电压 ${(简历)}$ 测量。初始值之间的线性相关性 ${V}_{T}$ 和消极的 ${V}_{T}$ 观察到的转变进一步支持过氧化物理论。这项工作突出了评估氧化物基半导体器件 HCIS 的重要性。