A hole-controlled lateral insulated gate bipolar transistor (HC-LIGBT) device with an ultrafast turn-off speed is investigated and experimentally demonstrated. Utilizing a high-permittivity material as the dielectric on the novel device structure, the hole carrier movements are controlled. In the device ON-state, the anode plasma injection effect is amplified to improve the current density. In the OFF-state, the electrons in the drift region are rapidly neutralized by the hole current, after which the anode voltage is pulled to the bus voltage by the external driving circuit through a voltage couple to realize a fast turn-off speed. The ON-state current is not compromised for the switching speed. The device is fabricated with a $1~\mu \text{m}$ fully custom process using Si3N4 as the dielectric. The test results indicate that the breakdown voltage of the device is 350 V, the ON-state current density is 155 A/cm2 at an anode voltage of 2 V, and the rising edge of the voltage on the anode in the turn-off state lasts only 90 ns.

中文翻译：

---

具有超快关断速度的横向绝缘栅双极晶体管的制作与研究

研究并实验证明了一种具有超快关断速度的空穴控制横向绝缘栅双极晶体管 (HC-LIGBT) 器件。利用高介电常数材料作为新型器件结构上的电介质，可以控制空穴载流子的运动。在器件导通状态下，阳极等离子体注入效应被放大以提高电流密度。在关断状态下，漂移区的电子被空穴电流迅速中和，之后外部驱动电路通过电压偶将阳极电压拉至母线电压，实现快速关断速度。导通状态电流不会因开关速度而受到影响。该器件采用 $1~\mu\text{m}$ 完全定制工艺制造，使用 Si3N4 作为电介质。