Shortening channels to the feature length of polymer domains is important to understand the charge transport in semiconducting polymers from macroscopic to microscopic scales. In this work, we fabricated polymer transistors with sub-domain-size channels by electron-beam lithography and asymmetrically aligned domains by off-center spin coating, in which a dry self-patterning method with hexagonal boron nitride was developed to eliminate parasitic leakage. The current sharply increased by 60 times when the channel length was shortened from 200 to 80 nm. The device with an 80 nm-long channel in the direction parallel to the aligned polymer domains delivered a saturation current 160 times higher than that of the orthogonal counterpart. These results and a velocity calculation suggested that the bottleneck of charge transport in electronic devices is domain boundaries. These results highlight the importance of high-efficiency intra-domain charge transport and also the inter-domain limitation. Our findings will contribute to further polymer optimization to improve the performance of polymer devices.

中文翻译：

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具有子域尺寸通道的非对称排列多晶聚合物晶体管中的电流急剧增加

将通道缩短到聚合物域的特征长度对于理解半导体聚合物中从宏观到微观尺度的电荷传输非常重要。在这项工作中，我们通过电子束光刻和偏心旋涂技术制造了具有子域尺寸通道的聚合物晶体管，其中开发了一种使用六方氮化硼的干式自构图方法来消除寄生泄漏。当沟道长度从 200 nm 缩短到 80 nm 时，电流急剧增加了 60 倍。在平行于排列的聚合物域的方向上具有 80 nm 长通道的器件提供的饱和电流是正交对应物的 160 倍。这些结果和速度计算表明电子设备中电荷传输的瓶颈是域边界。这些结果突出了高效域内电荷传输以及域间限制的重要性。我们的发现将有助于进一步优化聚合物以提高聚合物器件的性能。