Temperature sensor using series GaN Schottky barrier diode (SBD) with TiN anode was fabricated and evaluated extensively. The diode presents good characteristics in a wide temperature range from 25 °C to 200 °C. The temperature dependent forward voltage of the conventional 8-finger SBD at a fixed current shows good linearity, resulting in a sensitivity of approximately 1.14 mV/K. On the other hand, the series SBD with two 8-finger diodes enhances the sensitivity by nearly two times. The enhancement in temperature sensitivity is interpreted using a series model, with the obtained parameters are comparable with the 8-finger SBD.

中文翻译：

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使用串联肖特基势垒二极管结构提高 GaN 基温度传感器的灵敏度

使用带有 TiN 阳极的串联 GaN 肖特基势垒二极管 (SBD) 的温度传感器被制造和广泛评估。该二极管在 25°C 至 200°C 的宽温度范围内表现出良好的特性。在固定电流下，传统 8 指 SBD 的温度相关正向电压显示出良好的线性，导致灵敏度约为 1.14 mV/K。另一方面，带有两个 8 指二极管的串联 SBD 将灵敏度提高了近两倍。使用系列模型解释温度灵敏度的增强，获得的参数与 8 指 SBD 相当。