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High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-04-01 , DOI: 10.1109/led.2020.2976456
Junao Cheng , Caiyu Wang , Christopher Freeze , Omor Shoron , Nick Combs , Hao Yang , Nidhin Kurian Kalarickal , Zhanbo Xia , Susanne Stemmer , Siddharth Rajan , Wu Lu

High-current molecular beam epitaxial perovskite oxide semiconductor BaTiO3/BaSnO3 heterostructure field effect transistors on SrTiO3 substrates were developed. Record high current density of $\text{I}_{{\mathrm{max}}} =406.7$ mA/mm, maximum transconductance $\text{g}_{{{\text {m}}}} =72.3$ mS/mm were achieved in a field effect transistor with gate length $\text{L}_{{{\text {g}}}} = 0.64\,\,\mu \text{m}$ , and source-drain spacing $\text{L}_{{{\text {sd}}}} = 3.5\,\,\mu \text{m}$ . The device has a low threshold voltage of $\text{V}_{{{\text {th}}}}= - 4.5$ V and the capability to modulate $5.7\times 10^{{{{13}}}}$ cm $^{{-{2}}}$ electron density in the BaSnO3 channel. The high channel current and gate modulation efficiency are attributed to the high mobility and charge density in the BaSnO3 channel and the utilization of high-k BaTiO3 ( $\varepsilon $ is in the range of 425 and 387 as the electric field increases from 46 to 85 kV/cm) layer as the gate dielectric for charge modulation. Though the device suffers from low current ON/OFF ratio and a large subthreshold swing due to the gate leakage resulted from threading dislocations, this work demonstrates the great potential of perovskite semiconductors for electronic device applications.

中文翻译:

高电流钙钛矿氧化物 BaTiO3/BaSnO3 异质结构场效应晶体管

开发了基于SrTiO 3衬底的大电流分子束外延钙钛矿氧化物半导体BaTiO 3 /BaSnO 3异质结构场效应晶体管。记录高电流密度 $\text{I}_{{\mathrm{max}}} =406.7$ mA/mm,最大跨导 $\text{g}_{{{\text {m}}}} =72.3$ mS/mm 是在具有栅极长度的场效应晶体管中实现的 $\text{L}_{{{\text {g}}}} = 0.64\,\,\mu \text{m}$ , 和源漏间距 $\text{L}_{{{\text {sd}}}} = 3.5\,\,\mu \text{m}$ . 该器件具有低阈值电压 $\text{V}_{{{\text {th}}}}= - 4.5$ V 和调制能力 $5.7\times 10^{{{{{13}}}}$ 厘米 $^{{-{2}}}$ BaSnO 3通道中的电子密度。高沟道电流和栅极调制效率归因于 BaSnO 3沟道中的高迁移率和电荷密度以及高 k BaTiO 3 ( $\varepsilon $ 当电场从 46 kV/cm 增加到 85 kV/cm) 层作为电荷调制的栅极电介质时,它在 425 和 387 的范围内。尽管由于螺纹位错导致栅极泄漏,该器件具有低电流开/关比和大的亚阈值摆动,但这项工作证明了钙钛矿半导体在电子器件应用中的巨大潜力。
更新日期:2020-04-01
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