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Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector with a Response Time Below 25 ps
IEEE Journal of Quantum Electronics ( IF 2.5 ) Pub Date : 2020-06-01 , DOI: 10.1109/jqe.2020.2981043 Yiming Zhao , William R. Donaldson
IEEE Journal of Quantum Electronics ( IF 2.5 ) Pub Date : 2020-06-01 , DOI: 10.1109/jqe.2020.2981043 Yiming Zhao , William R. Donaldson
Aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal–semiconductor–metal structures and tested with ultrafast, UV laser pulses. The measurements were done with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy.
中文翻译:
响应时间低于 25 ps 的超快紫外 AlGaN 金属-半导体-金属光电探测器
铝-镓-氮化物光电探测器已成功制造成微米级金属-半导体-金属结构,并用超快紫外激光脉冲进行测试。测量是用单次示波器完成的。由测量系统引起的脉冲展宽效应被系统地评估和减少,以解决探测器的固有响应时间。性能最好的设备显示出低于 25 ps 的响应时间和低于 20 pA 的暗电流。该器件显示出与偏置电压和激光能量的线性响应。
更新日期:2020-06-01
中文翻译:
响应时间低于 25 ps 的超快紫外 AlGaN 金属-半导体-金属光电探测器
铝-镓-氮化物光电探测器已成功制造成微米级金属-半导体-金属结构,并用超快紫外激光脉冲进行测试。测量是用单次示波器完成的。由测量系统引起的脉冲展宽效应被系统地评估和减少,以解决探测器的固有响应时间。性能最好的设备显示出低于 25 ps 的响应时间和低于 20 pA 的暗电流。该器件显示出与偏置电压和激光能量的线性响应。