In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented. This paper also presents a novel way of accurately modelling the lateral coupling in the substrate. The presented model can be applied to any foundry process, and its validity has been demonstrated using a novel technology, the D01GH GaN process developed by OMMIC, which has a high resistivity substrate. To do so, seventeen inductors have been designed and manufactured. The proposed model has been verified against EM simulations and measurements of the designed inductors. Comparisons show that the model can correctly estimate the behaviour of the inductor, improving the results of the EM simulations for most cases. The root mean square (RMS) error calculated across the samples when estimating the inductance is 0.0565. The RMS error for the quality factor results (2.2727) is also adequate, although there is more deviation when comparing the results with the measurements.

中文翻译：

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Si 电感器上 GaN 的分析可扩展集总元素模型

在本文中，提出了一种宽带分布式模型，该模型可以近似具有锥形和不带锥形的方形和八角形电感器的行为。本文还提出了一种精确模拟基板中横向耦合的新方法。所提出的模型可应用于任何代工工艺，并且其有效性已使用新技术证明，即由 OMMIC 开发的 D01GH GaN 工艺，该工艺具有高电阻率衬底。为此，已经设计和制造了 17 个电感器。所提出的模型已经针对设计的电感器的 EM 模拟和测量进行了验证。比较表明，该模型可以正确估计电感器的行为，从而改善了大多数情况下的 EM 仿真结果。估计电感时跨样本计算的均方根 (RMS) 误差为 0.0565。质量因数结果 (2.2727) 的 RMS 误差也足够了，尽管在将结果与测量值进行比较时存在更多偏差。