This article presents an electro-absorption modulator (EAM)-based single-mode (SM) 50-Gb/s non return to zero (NRZ) Si-photonic optical link in a 16-nm FinFET. The EAM device is modeled to include its electrical and optical properties. The transmitter (TX) uses T-coil based over-peaking to improve modulation efficiency and relax transimpedance amplifier’s (TIA’s) bandwidth and noise requirement. The receiver (RX) uses a three-stage TIA with T-coils to improve bandwidth. The link sensitivity is −10.9-dBm optical modulation amplitude (OMA) at bit error rate (BER) < 10−12 with 2-dB link margin at 50 Gb/s. The combined power efficiency of the RX, TX, and clocking is 3.16 pJ/bit and the external laser consumes 1.15 pJ/bit with 10% wall-plug efficiency.

中文翻译：

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在 16 纳米 FinFET 中设计 50 Gb/s 混合集成硅光子光链路

本文介绍了一种基于电吸收调制器 (EAM) 的单模 (SM) 50 Gb/s 非归零 (NRZ) 硅光子光链路，该链路位于 16 纳米 FinFET 中。EAM 设备被建模为包括其电学和光学属性。发射器 (TX) 使用基于 T 线圈的过峰化来提高调制效率并放宽跨阻放大器 (TIA) 的带宽和噪声要求。接收器 (RX) 使用带有 T 线圈的三级 TIA 来提高带宽。链路灵敏度为 -10.9-dBm 光调制幅度 (OMA)，误码率 (BER) < 10-12，50 Gb/s 时具有 2-dB 链路余量。RX、TX 和时钟的组合功率效率为 3.16 pJ/bit，外部激光器消耗 1.15 pJ/bit，墙上插头效率为 10%。