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Co dopant drives surface smooth and improves power factor of evaporated SnSe films
Ceramics International ( IF 5.2 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.ceramint.2020.03.229
Shiying Liu , Mingdi Lan , Guojian Li , Yi Yuan , Baohai Jia , Qiang Wang

Abstract Unstable nanosheet morphology of polycrystalline SnSe film becomes a limitation for its application in the field of waste heat recovery. This study dopes Co into the evaporated SnSe film to smooth the surface and to improve power factor. The results show that Co dopant makes the rough nanosheet change to surface densely packed structure. The dopant Co forms Co particles distributing around SnSe grain boundary, which suppress SnSe (011) plane growth and subsequent reduce nanosheet formation. In addition, Co dopant increases electric conductivity through increasing the carrier concentration, but the magnetism of Co particles decreases carrier mobility due to spin-charge coupling and also affects the Seebeck coefficient. The power factor thus is improved after doped Co. This study presents a method to fabricate polycrystalline SnSe film with smooth surface morphology and high power factor.

中文翻译:

Co掺杂剂驱动表面光滑并提高蒸发的SnSe薄膜的功率因数

摘要 多晶SnSe薄膜的不稳定纳米片形貌成为其在余热回收领域应用的限制。该研究将 Co 掺杂到蒸发的 SnSe 膜中以平滑表面并提高功率因数。结果表明,Co掺杂剂使粗糙的纳米片转变为表面致密的结构。掺杂剂 Co 形成分布在 SnSe 晶界周围的 Co 颗粒,这抑制了 SnSe (011) 面的生长并随后减少了纳米片的形成。此外,Co掺杂剂通过增加载流子浓度来提高电导率,但Co粒子的磁性由于自旋电荷耦合而降低了载流子迁移率,并且也会影响塞贝克系数。因此,掺杂 Co 后功率因数得到改善。
更新日期:2020-07-01
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