Abstract Colossal permittivity (CP) ceramics have a great potential in the development of miniaturization, integration and lightweight of electronic components. In this work, NdxSr1-xTiO3 (0.000 ≤ x ≤ 0.014) (NST) ceramics are successfully prepared via sintering in N2. Simultaneously microstructure and dielectric properties of NST ceramics are characterized. It can be found that 0.010 ≤ x ≤ 0.014 ceramics show CP (>20000, 20–1 × 106 Hz) and low dielectric loss ( T i T i ' , N d S r ⋅ , V O ⋅ ⋅ ) forms the defect dipoles ( Ti Ti ' − N d S r ⋅ , T i T i ' − V O ⋅ ⋅ − T i T i ' ) and the defect clusters ( V O ⋅ ⋅ − 3 T i T i ' − N d S r ⋅ ), which produces the electron pinning effect and restricts the long-range movement of the carriers. Additionally, the grain boundary with high insulation resistivity plays a major role in the resistance of ceramics, and it also acts as a high barrier layer to limit the movement of several delocalized carriers.

中文翻译：

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Nd改性SrTiO3无铅陶瓷材料的缺陷化学和巨大介电行为

摘要 巨介电常数（CP）陶瓷在电子元件小型化、集成化和轻量化方面具有巨大的发展潜力。在这项工作中，通过在 N2 中烧结成功制备了 NdxSr1-xTiO3 (0.000 ≤ x ≤ 0.014) (NST) 陶瓷。同时表征了NST陶瓷的微观结构和介电性能。可以发现，0.010 ≤ x ≤ 0.014 陶瓷表现出 CP (>20000, 20–1 × 106 Hz) 和低介电损耗 (T i T i ' , N d S r ⋅ , VO ⋅ ⋅ ) 形成缺陷偶极子 ( Ti Ti ' − N d S r ⋅ , T i T i ' − VO ⋅ ⋅ − T i T i ' ) 和缺陷簇 ( VO ⋅ ⋅ − 3 T i T i ' − N d S r ⋅ )产生电子钉扎效应并限制载流子的长距离运动。此外，