Abstract In this paper electrical analysis GO/TiO2/Si MOS junction was performed. Current–voltage (I–V) characteristics of diode were analyzed at 298–398 K. Several parameters such as ideality factor (η), barrier height ( φ B ), rectification ratio (RR), series and shunt resistances (RS& Rsh) were estimated from I–V plots. The results showed that the MOS junction obeyed the thermionic emission phenomenon. In addition, capacitance – voltage (C–V) were measured at voltage range (−2Vto+2 V), at temperature range of (233–363 K) and at different frequencies. At low frequency 10 Hz revealed that negative capacitance of capacitor. A negative capacitance is due to an inductive behavior of studied materials. Moreover, at higher frequency, f = 2 × 107 Hz, capacitance increases slightly with the increase of temperature and the interface states (Nss) cannot pursue ac signal and gives the geometrical capacitance values.

中文翻译：

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GO/TiO2/n-Si MOS器件的电容-电压特性研究

摘要 本文对GO/TiO2/Si MOS结进行了电学分析。在 298-398 K 下分析二极管的电流 - 电压 (I-V) 特性。 几个参数，如理想因子 (η)、势垒高度 ( φ B )、整流比 (RR)、串联和分流电阻 (RS& Rsh)从 I-V 图估计。结果表明，MOS结服从热电子发射现象。此外，在电压范围 (-2V to+2 V)、温度范围 (233–363 K) 和不同频率下测量了电容 - 电压 (C-V)。在低频 10 Hz 显示电容器的负电容。负电容是由于所研究材料的电感行为造成的。此外，在较高频率下，f = 2 × 107 Hz，