This work presents $$\hbox {Bi}_{{2}}\hbox {O}_{\mathrm {3}}\hbox {-doped SnO}_{{2}}$$ ceramic varistors prepared through conventional ceramic processing in the sintering temperature range of 1290–1320°C. The sample sintered at 1300°C exhibits a breakdown electric field as low as 11.6 V $$\hbox {mm}^{\mathrm {-1}}$$. Scanning electron microscopy images reveal that all the samples have a compact structure, and energy dispersive spectroscopy results for the sample sintered at 1300°C indicate that Bi distributes homogeneously along the grain boundaries and aggregates inhomogeneously on the grain surfaces. With increasing sintering temperature, the grain boundary barrier height remains nearly constant at 0.80 eV. In both the dielectric loss and electric modulus spectra of the sample sintered at 1300°C, obvious relaxations were observed and the activation energies obtained from the respective spectra were 0.33 and 0.15 eV, which are expected to be related to oxygen vacancies and interstitial ions, respectively. Complex impedance spectra are employed to develop a non-typical equivalent circuit model for the $$\hbox {Bi}_{{2}}\hbox {O}_{\mathrm {3}}\hbox {-doped SnO}_{{2}}$$ ceramic varistors at low voltage that yields an excellent fit to the data.

中文翻译：

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$$\hbox {Bi}_2\hbox {O}_{3}\hbox {掺杂}$$Bi2O3 掺杂$$\hbox {SnO}_{{2}}$$SnO2 具有低击穿电场的压敏电阻

这项工作展示了 $$\hbox {Bi}_{{2}}\hbox {O}_{\mathrm {3}}\hbox {-掺杂的 SnO}_{{2}}$$ 陶瓷压敏电阻器在 1290-1320°C 的烧结温度范围内加工。在 1300°C 下烧结的样品表现出低至 11.6 V $$\hbox {mm}^{\mathrm {-1}}$$ 的击穿电场。扫描电子显微镜图像显示所有样品都具有致密的结构，在 1300°C 下烧结的样品的能量色散谱结果表明 Bi 沿晶界均匀分布，并在晶粒表面不均匀聚集。随着烧结温度的升高，晶界势垒高度几乎保持在 0.80 eV。在 1300°C 下烧结的样品的介电损耗和电模量谱中，观察到明显的弛豫，从各自的光谱获得的活化能分别为 0.33 和 0.15 eV，预计分别与氧空位和间隙离子有关。使用复阻抗谱为 $$\hbox {Bi}_{{2}}\hbox {O}_{\mathrm {3}}\hbox {-掺杂的 SnO}_ 开发非典型等效电路模型{{2}}$$ 陶瓷压敏电阻在低电压下与数据非常吻合。