Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO₂ using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).

多孔半导体膜的形态有助于流体扩散和质量传输到各种电子设备的电荷携带层中。在这里，我们报道了一些具有多孔性的有机半导体-绝缘体混合膜的制造工艺[半导体：P3HT（p型聚合物），C8BTBT（p型小分子）和N2200（n型聚合物）；绝缘体：PS]通过呼吸图构图法及其在有机薄膜晶体管（OTFT），气体传感器，有机电化学晶体管（OECTs）和化学掺杂导电膜中的广泛广泛应用。这些薄膜的详细形态学分析表明，形成了具有均匀纳米孔的织构层，该织构层到达具有不变固态填充结构的底部基材。_2（使用P3HT / PS），更快的开关速度（P3HT / PS OECTs为4.7 s）和更有效的分子掺杂（电导率，对于N2200 / PS为0.13 S / m）。