Abstract Cu2ZnSn(S,Se)4 (CZTSSe) has received considerable attention as the promising absorber for thin-film solar cells. For traditional selenization process, the issues of Sn-loss, lower S/(S + Se) ratio, and unsuitable back contact interface extensively exist in CZTSSe solar cells. In present work, SnSe and SnS powder is introduced during selenization process, respectively. The effects of SnSe and SnS powder on CZTSSe films and the Mo/CZTSSe interface have been comprehensively studied. We discover that SnS not only can provide the Sn-contained vapor in selenization process but also offer S-vapor. Due to the presence of Sn-contained vapor, the number of voids in the CZTSSe absorber and Mo/CZTSSe interface decreases remarkably and the Sn-loss is effectively suppressed. The thickness of Mo(S,Se)2 layer is significantly reduced, and the S/(S + Se) ratio in CZTSSe bulk obviously increases owing to the presence of S-vapor. As a consequence, the open-circuit voltage and fill factor of the solar cell significantly increase and the CZTSSe solar cell with efficiency of 10.07% (total area) is successfully fabricated.

中文翻译：

---

效率超过 10% 的 Cu2ZnSn(S,Se)4 太阳能电池：硒化过程中引入 SnS 粉末的影响

摘要 Cu2ZnSn(S,Se)4 (CZTSSe) 作为一种有前途的薄膜太阳能电池吸收剂受到了广泛的关注。对于传统的硒化工艺，CZTSSe太阳能电池普遍存在Sn损失、较低的S/(S+Se)比和不合适的背接触界面等问题。在目前的工作中，分别在硒化过程中引入 SnSe 和 SnS 粉末。已经全面研究了 SnSe 和 SnS 粉末对 CZTSSe 薄膜和 Mo/CZTSSe 界面的影响。我们发现 SnS 不仅可以在硒化过程中提供含锡蒸汽，还可以提供 S 蒸汽。由于含Sn蒸气的存在，CZTSSe吸收体和Mo/CZTSSe界面中的空隙数量显着减少，Sn损失得到有效抑制。Mo(S,Se)2 层的厚度显着降低，由于 S 蒸气的存在，CZTSSe 本体中的 S/(S + Se) 比率明显增加。结果，太阳能电池的开路电压和填充因子显着增加，并且成功制造了效率为10.07％（总面积）的CZTSSe太阳能电池。