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Surface blistering in ZrSiN nanocomposite films irradiated with He ions
Surface & Coatings Technology ( IF 5.4 ) Pub Date : 2020-03-25 , DOI: 10.1016/j.surfcoat.2020.125654
V.V. Uglov , G. Abadias , S.V. Zlotski , I.A. Saladukhin , N.N. Cherenda

In the present work, the influence of silicon content on the surface blistering of ZrSiN nanocomposite films after He ion irradiation (energy of 30 keV and doses up to 8 × 1016 cm−2) and post-radiation annealing at the temperature of 600 °C was investigated. Using SEM, TEM and AFM methods, the influence of amorphous/crystalline boundaries on the formation of blisters in the n-ZrN/a-Si3N4 nanocomposites was studied. ZrSiN nanocomposite films (~300 nm thick) were deposited at 600 °C onto (001) Si wafers by reactive unbalanced magnetron sputtering technique. Silicon concentration was varied from 7.1 to 23.1 at.%. While helium ion irradiation (at the dose of 8 × 1016 cm−2) did not change the surface morphology of the nanocomposite films, the alteration of the surface was observed after vacuum annealing. It was revealed that post-radiation annealing (600 °C) of ZrN and Si3N4 mononitride films resulted in surface blistering at the dose of 5 × 1016 cm−2. Rather low blister density (0.017 μm−2) after post-radiation annealing at the dose of 5 × 1016 cm−2 was also observed for the nanocomposite film with 7.1 at.% Si content. As the irradiation dose increased up to 8 × 1016 cm−2, the surface density of blisters raised significantly (0.53 μm−2). It was found that increasing of Si concentration in the nanocomposite films was beneficial for their radiation resistance. The ZrSiN nanocomposite film with maximum Si content of 23.1 at.% was the most stable, with no sign of surface blistering being detected.



中文翻译:

He离子辐照的ZrSiN纳米复合薄膜表面起泡

在目前的工作中,硅含量对He离子辐照(能量为30 keV,剂量最高为8×10 16  cm -2)和600°C的辐照后退火后ZrSiN纳米复合膜表面起泡的影响研究了C。使用SEM,TEM和AFM方法,研究了非晶/晶界对n-ZrN / a-Si 3 N 4纳米复合材料中水泡形成的影响。通过反应性不平衡磁控溅射技术在600°C下将ZrSiN纳米复合膜(约300 nm厚)沉积在(001)Si晶片上。硅浓度从7.1变化到23.1at。%。同时进行氦离子照射(剂量为8×10 16  cm -2)没有改变纳米复合膜的表面形态,在真空退火后观察到表面的变化。发现ZrN和Si 3 N 4单氮化物膜的辐射后退火(600℃)导致以5×10 16  cm -2的剂量产生表面起泡。对于Si含量为7.1at。%的纳米复合膜,在以5×10 16  cm -2的剂量进行辐射后退火之后,也观察到较低的起泡密度(0.017μm -2)。随着辐照剂量增加至8×10 16  cm -2,水泡的表面密度显着升高(0.53μm -2)。已经发现,增加纳米复合膜中的Si浓度对于其抗辐射性是有益的。最大Si含量为23.1原子%的ZrSiN纳米复合膜是最稳定的,没有发现表面起泡的迹象。

更新日期:2020-03-25
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