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Signature of band inversion in the perovskite thin-film alloysBaSn1–xPbxO3
Physical Review B ( IF 3.7 ) Pub Date : 2020-03-25 , DOI: 10.1103/physrevb.101.125125
Junichi Shiogai , Takumaru Chida , Kenichiro Hashimoto , Kohei Fujiwara , Takahiko Sasaki , Atsushi Tsukazaki

Perovskite oxides ABO3 containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO3, the semimetal BaPbO3 is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O2p orbital. In this paper, we exemplify a band-gap modification by systematic structural, optical, and transport measurements in BaSn1xPbxO3 films. A sudden suppression of the conductivity and an enhancement of the weak antilocalization effect at x=0.9 indicate the presence of a singular point in the electronic structure as a signature of the band inversion. Our findings provide an intriguing platform for combining topological aspects and electron correlation in perovskite oxides based on band-gap engineering.

中文翻译:

钙钛矿薄膜合金中能带反转的特征BaSn1–xPbxO3

钙钛矿氧化物 一种Ø3含有重质B元素的元素是一类候选材料,可容纳具有大自旋轨道相互作用的拓扑金属。与带状绝缘子相反钡锡Ø3,半金属 Ø3 建议将其作为具有倒带结构的典型示例,其导带主要由 Ø-2p轨道。在本文中,我们通过系统的结构,光学和传输测量来举例说明带隙修饰ñ1个-XPbXØ3电影。突然抑制电导率并增强弱的抗局部定位作用X=0.9表示电子结构中存在奇异点,作为带反转的标志。我们的发现为基于带隙工程的钙钛矿氧化物的拓扑学方面和电子相关性的结合提供了一个有趣的平台。
更新日期:2020-03-26
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