Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS₂ or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.

中文翻译：

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二维层状材料基面上金属氧化物的缺陷种子原子层沉积

机械剥落的2D分层材料上的原子层沉积（ALD）自发地在基底表面的三角形和线性沉积物中产生金属氧化物纳米颗粒的网络图案。网络图案是在一定范围的ALD条件下形成的，并且与ALD反应器中基板的方向无关。这些图案是在MoS _{2上生成的}当使用四（二甲基氨基）钛或双（乙基环戊二烯基）锰作为前体时，则显示为HOPG或HOPG，这表明该现象在2D材料中很普遍。透射电子显微镜显示，在沉积之前，沿着机械剥落的2D薄片的基底平面存在位错网络，表明周期性的基底平面缺陷与层的范德华堆叠的破坏有关，例如完美的线位错和三角形延伸堆叠断层网络，引入表面反应性景观，导致图案化沉积的出现。