Dirac-electronic tunneling and transport properties with both finite and zero energy band gap are investigated for graphene with an in-plane tilted potential barrier embedded with scatters. For a tilted barrier, by using Wentzel-Kramers-Brillouin approximation, an analytical solution is obtained first for transmission coefficient of Dirac electrons in gapped graphene in the absence of any scatters. In the presence of either a single or a continuous distribution of scatters embedded within a tilted barrier, however, a numerical scheme based on finite-difference approach is developed for accurately calculating both transmission coefficient and tunneling resistance of Dirac electrons. Here, the combination of a tilted barrier and a scatter potential can be viewed as an effective barrier-potential profile facilitated by a proper gate structure. Meanwhile, a full analysis and detailed comparisons are presented for the interplay between effects of both distributed scatters in a barrier and barrier tilting on tunneling transport of Dirac electrons in graphene. The barrier-tilting field and scatter position are found to play a key role in controlling a peak of tunneling resistance as well as in its switching to a cusp by a mid-barrier-embedded scatter as the incident energy reaches the Dirac point in a barrier. Different from a single scatter, a continuous distribution within a barrier can enhance the unimpeded incoherent tunneling for head-on collision while greatly suppressing skew ones with increasing barrier-tilting field. All these predicted attractive transport properties are expected to be extremely useful for designing both novel electronic and optical graphene-based devices and electronic lenses in ballistic-electron optics.

中文翻译：

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势垒倾斜和势垒内散射体对Dirac电子在石墨烯中隧穿传输的影响之间的相互作用

研究了平面内倾斜势垒内嵌有散射的石墨烯的具有有限和零能带隙的Dirac电子隧穿和输运特性。对于倾斜的势垒，通过使用Wentzel-Kramers-Brillouin近似，首先获得在无任何散射的情况下带隙石墨烯中Dirac电子的透射系数的解析解。然而，在存在嵌入倾斜势垒内的散射的单个或连续分布的情况下，开发了一种基于有限差分方法的数值方案，用于精确计算狄拉克电子的透射系数和隧穿电阻。在此，倾斜的势垒和散射势的组合可以被视为通过适当的栅极结构促进的有效势垒势分布。同时，针对势垒中的分布散射和势垒倾斜对石墨烯中狄拉克电子的隧穿传输的相互作用之间的相互作用，进行了全面的分析和详细的比较。发现势垒倾斜场和散射位置在控制隧穿电阻的峰值以及当入射能量到达势垒中的狄拉克点时被中间势垒嵌入的散射转换为尖峰起着关键作用。与单个散射不同，屏障内的连续分布可以增强针对正面碰撞的无障碍非相干隧穿，同时通过增加屏障倾斜场来极大地抑制偏斜。