We study the anomalous Hall effect (AHE) of single-crystalline ${\mathrm{Co}}_3{\mathrm{Sn}}_{2-x}{\mathrm{In}}_x{\mathrm{S}}_2$ over a large range of indium concentration $x$ from 0 to 1. Their magnetization reduces progressively with increasing $x$ while their ground state evolves from a ferromagnetic Weyl semimetal into a nonmagnetic insulator. Remarkably, after systematically scaling the AHE, we find that their intrinsic anomalous Hall conductivity (AHC) features an unexpected maximum at around $x=0.15$. The change of the intrinsic AHC corresponds with the doping evolution of Berry curvature and the maximum arises from the magnetic topological nodal-ring gap. Our experimental results show a larger AHC in a fundamental nodal-ring gap than that of Weyl nodes.

中文翻译：

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磁性拓扑半金属Co3Sn2-xInxS2中增强的异常霍尔效应

我们研究了单晶的霍尔效应（AHE） ${\mathrm{有限公司}}_3{锡}_{2-X}{在}_X{\mathrm{小号}}_2$ 在大范围的铟浓度下 $X$ 从0到1。它们的磁化强度随着增加而逐渐减小 $X$而它们的基态从铁磁Weyl半金属演变为非磁绝缘体。值得注意的是，在系统地缩放了AHE之后，我们发现它们的固有异常霍尔电导率（AHC）的特征在于，在大约$X=0.15$。本征AHC的变化与贝里曲率的掺杂演变相对应，最大值来自于磁性拓扑结环间隙。我们的实验结果表明，在基本的节点环间隙中，AHC大于Weyl节点。