Silicon and tin(IV) phthalocyanines, which have been demonstrated as simple-to-synthesize materials for n-type organic thin-film transistors (OTFTs), have relatively shallow lowest unoccupied molecular orbital (LUMO) levels that create a Schottky barrier with the gold source–drain contacts typically used in device fabrication. To reduce the contact resistance (R_C) associated with this barrier and improve the OTFT performance, we fabricated bottom-gate top-contact (BGTC) devices using low-work-function metals (Mn/Cr) and an electron dopant material (bathocuproine, BCP) as contact interlayers. We characterized two tin phthalocyanines (SnPcs), tin bis(pentafluorophenoxy)phthalocyanine (F₁₀-SnPc) and tin bis(2,4,6-trifluorophenoxy)phthalocyanine (246F-SnPc), as organic semiconductors (OSCs) and compared them to their silicon phthalocyanine (SiPc) analogues. We found that using Mn and Cr interlayers with SiPc OTFTs reduces R_C to as low as 11.8 kΩ cm and reduces the threshold voltage (V_T) to as low as 7.8 V while improving linear region characteristics compared to devices using silver or gold electrodes only. BCP interlayers appear to reduce V_T in all SiPc and SnPc devices and increase the off-state conductivity of SnPc devices if covering the entire OSC. Overall, this work demonstrates the potential for metal interlayers and solid-state organic interlayers for improving electron transport in low-cost, n-type OTFTs using group 14 phthalocyanines.

中文翻译：

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第14组酞菁有机薄膜晶体管中使用锰，铬和浴铜的接触工程

硅和锡（IV）酞菁已被证明是n型有机薄膜晶体管（OTFT）的易于合成的材料，具有相对较浅的最低未占据分子轨道（LUMO）含量，可与肖特基势垒形成肖特基势垒。金源-漏极触点通常用于设备制造。为了降低与该势垒相关的接触电阻（R _C）并提高OTFT性能，我们使用低功函数金属（Mn / Cr）和电子掺杂材料（bathocuproine）制造了底栅顶接触（BGTC）器件。 ，BCP）作为接触中间层。我们对两种锡酞菁（SnPcs），双（五氟苯氧基）锡酞菁锡（F ₁₀-SnPc）和双（2,4,6-三氟苯氧基）锡酞菁（246F-SnPc），作为有机半导体（OSC），并将它们与其硅酞菁（SiPc）类似物进行了比较。我们发现，与仅使用银或金电极的器件相比，将Mn和Cr中间层与SiPc OTFT一起使用可将R _C降低至11.8kΩcm ，并将阈值电压（V _T）降低至7.8 V，同时改善了线性区域特性。BCP中间层似乎降低了V _T如果覆盖整个OSC，则可在所有SiPc和SnPc器件中使用它，并增加SnPc器件的截止态电导率。总体而言，这项工作证明了金属中间层和固态有机中间层具有改善使用第14号酞菁的低成本n型OTFT中电​​子传输的潜力。