In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal–organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.

中文翻译：

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超高品质InGaN血小板的实现，可以用作红色Micro-LED的松弛模板。

在这项工作中，提出了铟含量高达18％，无位错并提供光滑的顶部c平面的主要松弛的InGaN血小板阵列。通过金属有机气相外延在由6个等效{101̅1}平面定义的InGaN金字塔的化学机械抛光形成的圆顶状InGaN表面上生长InGaN薄片。圆顶状表面在生长过程中通过形成束状台阶而变平，这些台阶在到达倾斜的{101̅1}平面时终止。连续生长发生在平坦的顶部c平面上，在c平面和倾斜的{101̅1}平面之间的六个角处开始了双层表面台阶，从而形成了高质量的InGaN层。顶端形成的InGaN薄片的c平面可用作红色微发光二极管的高质量模板。