Abstract

Various synthetic approaches have been proposed and studied to grow high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs) thin films. However, most of current methods suffer from intrinsic material defects or technical limitations. Here, in this paper, large-area few-layer MoS₂ thin films have been prepared on SiO₂/Si substrate through sulfurizing pre-deposited MoO₃ film by atomic layer deposition (ALD). Good film uniformity, crystallinity and stoichiometry have been successfully achieved. The film thickness can be precisely controlled by adjusting the ALD cycle numbers during MoO₃ deposition. Field-effect transistor (FET) arrays have been further fabricated based on the large-area MoS₂ film. Both back-gate and top-gate geometries have been applied and have shown excellent reproducibility in electrical performance with average electron mobility of 1.71 cm² V⁻¹ s⁻¹ and 0.31 cm² V⁻¹ s⁻¹ for the back-gate and top-gate FETs, respectively. Our results have enabled a promising pathway with such thickness-controlled TMD film and homogeneous FET devices towards future low-dimensional nanoelectronics applications.

中文翻译：

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通过基于原子层沉积的薄膜合成集成的同质双栅MoS 2场效应晶体管

摘要

已经提出并研究了各种合成方法来生长高质量的二维（2D）过渡金属二卤化金属（TMDCs）薄膜。但是，当前大多数方法都存在固有的材料缺陷或技术限制。在此，本文通过原子层沉积（ALD）硫化预沉积的MoO ₃膜，在SiO ₂ / Si衬底上制备了大面积的几层MoS ₂薄膜。已成功实现了良好的薄膜均匀性，结晶度和化学计量。可以通过在MoO ₃沉积过程中调节ALD循环次数来精确控制膜厚度。基于大面积MoS ₂进一步制造了场效应晶体管（FET）阵列电影。两个背栅和顶栅几何形状已被应用，并与的1.71厘米平均电子迁移率的电性能已显示良好的重现性²  V ^-1 小号^-1和0.31厘米²  V ^-1 小号^-1为背栅和顶栅FET。我们的结果为这种厚度可控的TMD膜和均质FET器件向未来的低维纳米电子应用提供了一条有希望的途径。